KINETICS OF DEFECT FORMATION IN SILICON DURING IMPLANTATION OF PHOSPHORUS IONS

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作者：
DEKHTYAR, YD
SAGALOVICH, GL
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 04期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：477 / 478
页数：2
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