KINETICS OF DEFECT FORMATION IN SILICON DURING IMPLANTATION OF PHOSPHORUS IONS

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作者：

DEKHTYAR, YD

SAGALOVICH, GL

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 04期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：477 / 478

页数：2

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