共 50 条
- [31] CHARGE GENERATION AND RECOMBINATION IN SILICON DIOXIDE FROM HEAVY CHARGED PARTICLES.Harry Diamond Laboratories (Technical Report) HDL-TR, 1982, (HDL-TR):Oldham, Timothy R.
- [32] Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide filmsJOURNAL OF APPLIED PHYSICS, 2001, 89 (09) : 5015 - 5024DiMaria, DJStathis, JH
- [33] Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiationPhysics of the Solid State, 2011, 53 : 1474 - 1480M. V. ZamoryanskayaE. V. IvanovaA. A. Sitnikova
- [34] Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiationPHYSICS OF THE SOLID STATE, 2011, 53 (07) : 1474 - 1480Zamoryanskaya, M. V.Ivanova, E. V.Sitnikova, A. A.
- [35] Defect generation in ultrathin silicon dioxide films produced by anode hole injectionAPPLIED PHYSICS LETTERS, 2000, 77 (17) : 2716 - 2718DiMaria, DJ
- [36] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTSIEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478KNOLL, MBRAUNIG, DFAHRNER, WR
- [37] SHORT-TERM CHARGE ANNEALING IN ELECTRON-IRRADIATED SILICON DIOXIDEIEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 106 - +SIMONS, MHUGHES, HL
- [38] EFFECTS OF KEV ELECTRON-IRRADIATION ON THE AVALANCHE-ELECTRON GENERATION RATES OF 3 DONORS ON OXIDIZED SILICONJOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4378 - 4381SAH, CTSUN, JYCTZOU, JJT
- [39] INTERFACE ELECTRONIC STATE GENERATION IN SI-SIO2 SYSTEM BY AVALANCHE ELECTRON INJECTIONVESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1989, 30 (03): : 74 - 79KOZLOV, SNPOTAPOV, AY
- [40] CHarge instability in MIS structures with dielectric silicon dioxide-phosphoro-silicate glass layers under conditions of high-field tunnel injectionRussian Physics Journal, 1999, 42 (5) : 485 - 489Bondarenko G.G.Andreev V.V.Baryshev V.G.Stolyarov A.A.