GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION

被引：136

|

作者：

FISCHETTI, MV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

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D O I：

10.1063/1.335223

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2860 / 2879

页数：20

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