CHarge instability in MIS structures with dielectric silicon dioxide-phosphoro-silicate glass layers under conditions of high-field tunnel injection

被引：2

作者：

Bondarenko G.G. ^{[1
]}

Andreev V.V. ^{[1
]}

Baryshev V.G. ^{[1
]}

Stolyarov A.A. ^{[1
]}

机构：

来源：

Russian Physics Journal | 1999年 / 42卷 / 5期

关键词：

Polysilicon; Capture Cross Section; SiO2 Film; Hole Generation; Polysilicon Gate;

D O I：

10.1007/BF02508221

中图分类号：

学科分类号：

摘要：

The processes of charge degradation in MIS structures with dielectric silicon dioxide-phosphoro-silicate glass (PSG) layers are investigated for high-field tunnel electron injection from silicon. A model for their description is proposed. It is shown that in a PSG film the interband shock ionization intensity significantly decreases compared to SiO2. This phenomenon is quantitatively described within the framework of the model examined. It has been found that in structures with polysilicon gate doped with phosphorus the PSG film can be formed at the gate-semiconductor interface, which results in the formation of electronic traps in the dielectric and in a decreased thickness of the SiO2 layer in which the interband shock ionization proceeds. © 1999 Kluwer Academic/Plenum Publishers.

引用

页码：485 / 489

页数：4

共 16 条

[1] Charge degradation of MIS structures with phosphosilicate glass-passivated thermal silicon oxide at high-field tunnel injection
Mikroelektron, 6 (440-446):
[2] Technique of Control of the Gate Dielectric of MIS Structures Based on High-Field Charge Injection
D. V. Andreev
Inorganic Materials: Applied Research, 2022, 13 : 575 - 579
[3] Technique of Control of the Gate Dielectric of MIS Structures Based on High-Field Charge Injection
Andreev, D., V
INORGANIC MATERIALS-APPLIED RESEARCH, 2022, 13 (02) : 575 - 579
[4] Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection
D. V. Andreev
G. G. Bondarenko
V. V. Andreev
V. M. Maslovsky
A. A. Stolyarov
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, 14 : 260 - 263
[5] Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection
Andreev, D. V.
Bondarenko, G. G.
Andreev, V. V.
Maslovsky, V. M.
Stolyarov, A. A.
JOURNAL OF SURFACE INVESTIGATION, 2020, 14 (02): : 260 - 263
[6] Charge effects in dielectric films of MIS structures being under high- field injection of electrons at ionizing radiation
Andreev, Vladimir V.
Maslovsky, Vladimir M.
Andreev, Dmitrii, V
Stolyarov, Alexander A.
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018, 2019, 11022
[7] Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress
Samanta, P
SOLID-STATE ELECTRONICS, 1999, 43 (09) : 1677 - 1687
[8] Generation of hole traps in thin silicon oxide layers under high-field electron injection
Appl Phys Lett, 13 (1826):
[9] Generation of hole traps in thin silicon oxide layers under high-field electron injection
Brozek, T
Viswanathan, CR
APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1826 - 1828
[10] Study of the effect of silicon alloying with phosphorus on charge instability of MOS-structures under tunnel injection condition
Kaluzhskij Filial MGTU im. N.E., Baumana, Kaluga, Russia
Fiz Khim Obr Mater, 3 (22-26):

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