共 24 条
- [2] ON THE USE OF EFFECTIVE REFRACTIVE-INDEX IN DFB LASER MODE SEPARATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1630 - 1630
- [6] ANALYSIS OF FACET REFLECTIVITY, MIRROR LOSS, SINGLE-TRANSVERSE MODE CONDITION AND BEAM DIVERGENCE ANGLE AT 1.3-MU-M AND 1.55-MU-M WAVELENGTH OF INGAASP/INP BURIED HETEROSTRUCTURE SEMICONDUCTOR-LASER DIODES [J]. OPTICS AND LASER TECHNOLOGY, 1990, 22 (01): : 38 - 46
- [8] High-power single-mode InGaAsP/InP laser diodes for pulsed operation [J]. NOVEL IN-PLANE SEMICONDUCTOR LASERS XI, 2012, 8277
- [10] LOW-NOISE AND HIGH-POWER GAALAS LASER-DIODES WITH A NEW REAL REFRACTIVE-INDEX GUIDED STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (7A): : 3533 - 3542