CARRIER-INDUCED REFRACTIVE-INDEX CHANGE, MODE GAIN AND SPONTANEOUS-EMISSION FACTOR IN ALGALNP SQW-SCH LASER-DIODES

被引：5

作者：

TANAKA, T

MINAGAWA, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Tokyo 185, 1-280 Higashikoigakubo, Kokubunji

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 11期

关键词：

Lasers and laser applications; Quantum optics; Semiconductor lasers;

D O I：

10.1049/el:19900501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier-induced refractive-index change, mode gain and spontaneous emission factor are evaluated for AIGalnP single-quantum-well laser diodes with separate-confinement heterostructures. The results are compared with those of AIGalnP double-heterostructure lasers. The values of the a parameter, defined as the ratio of the real part of the refractive index to the imaginary part of the refractive index, are estimated as 4.9 and 12.8. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：766 / 767

页数：2