STRAIN EFFECTS ON REFRACTIVE-INDEX AND CONFINEMENT FACTOR OF INXGA(1-X)AS LASER-DIODES

被引：2
|
作者：
GHAFOURISHIRAZ, H
TSUJI, S
机构：
[1] Hitachi Central Research Lab, Tokyo, 185, P.O. Box 2, Kokubunji-Shi
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1994年 / 7卷 / 03期
关键词：
EFFECTS OF STRAIN; HETEROSTRUCTURE; SCH LASER DIODE;
D O I：
10.1002/mop.4650070309
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of strain upon the bandgap energy, the refractive index, and the confinement factor of a SCH laser diode with InxGa(1-x)As as its active layer have been investigated. (C) 1994 John Wiley and Sons, Inc.
引用
收藏
页码：113 / 119
页数：7
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