STRAIN EFFECTS ON REFRACTIVE-INDEX AND CONFINEMENT FACTOR OF INXGA(1-X)AS LASER-DIODES

被引：2

作者：

GHAFOURISHIRAZ, H

TSUJI, S

机构：

[1] Hitachi Central Research Lab, Tokyo, 185, P.O. Box 2, Kokubunji-Shi

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1994年 / 7卷 / 03期

关键词：

EFFECTS OF STRAIN; HETEROSTRUCTURE; SCH LASER DIODE;

D O I：

10.1002/mop.4650070309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of strain upon the bandgap energy, the refractive index, and the confinement factor of a SCH laser diode with InxGa(1-x)As as its active layer have been investigated. (C) 1994 John Wiley and Sons, Inc.

引用

页码：113 / 119

页数：7

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