GAAS-GAALAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER-DIODES SELECTIVELY GROWN BY MOLECULAR-BEAM EPITAXY ON SIO2-MASKED SUBSTRATES

被引：10

作者：

HONG, JM ^{[1
]}

WU, MC ^{[1
]}

WANG, S ^{[1
]}

WANG, WI ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.98844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：886 / 888

页数：3

共 24 条

[1] LOW-THRESHOLD GAAS/ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON OXIDE-MASKED SI SUBSTRATES
BURNS, GF
BLANCK, H
FONSTAD, CG
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2499 - 2501
[2] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219
[3] STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
OFFSEY, SD
SCHAFF, WJ
TASKER, PJ
ENNEN, H
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2527 - 2529
[4] HIGH-PERFORMANCE GAAS/ALGAAS GRADED REFRACTIVE-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI3N4 MASKED SUBSTRATES
VANGIESON, E
MEIER, HP
HARDER, C
BUCHMANN, P
WEBB, D
WALTER, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 405 - 408
[5] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE
HERSEE, SD
DECREMOUX, B
DUCHEMIN, JP
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478
[6] APPLICATION OF ALAS-GAAS SUPERLATTICES TO STEP-INDEX AND GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER-DIODES
TOKUDA, Y
OHTA, YN
FUJIWARA, K
NAKAYAMA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2729 - 2734
[7] CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE GAAS/ALGAAS LASER-DIODES ON SI SUBSTRATES BY SELECTIVE-AREA MOLECULAR-BEAM EPITAXY
LEE, HP
LIU, XM
WANG, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 343 - 348
[8] STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
OFFSEY, SD
SCHAFF, WJ
TASKER, PJ
EASTMAN, LF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2608 - 2608
[9] IMPROVEMENTS IN ALGAAS LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY USING A COMPOSITIONALLY GRADED BUFFER LAYER
HAYAKAWA, T
SUYAMA, T
KONDO, M
TAKAHASHI, K
YAMAMOTO, S
HIJIKATA, T
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 191 - 193
[10] EFFECTS OF SUBSTRATE HEATING ON THE SPATIAL UNIFORMITY OF THRESHOLD CURRENT AND EMISSION WAVELENGTH IN GAAS AND INGAAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
CHAND, N
VANDERZIEL, JP
CHU, SNG
SERGENT, AM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 1006 - 1009

← 1 2 3 →