IMPROVEMENTS IN ALGAAS LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY USING A COMPOSITIONALLY GRADED BUFFER LAYER

被引：11
|
作者：
HAYAKAWA, T
SUYAMA, T
KONDO, M
TAKAHASHI, K
YAMAMOTO, S
HIJIKATA, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 04期
关键词：
D O I：
10.1063/1.97166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：191 / 193
页数：3
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