RELIABLE RED-EMITTING LASER-DIODES GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY

We achieved over 1000 h stable continuous wave (CW) operation of AlGaInP laser diodes (LDs) with output power of 30 mW at 50 degrees C by using all solid source molecular beam epitaxy (MBE). In this paper the essential points for reliability are described. When sufficient outgassing of source materials was performed, secondary ion mass spectroscopy (SIMS) signals of hydrogen and oxygen from the as-grown layers became small. Reduction of these impurities dramatically increased photoluminescence (PL) intensity and decreased the threshold currents of LDs. Growth condition dependence of device performance was also investigated. Whilst the acceptable range of V/III ratio and phosphorus cracking temperature needed to obtain reliable operation were extensive, the suitable growth temperature range was limited.