INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：30
|
作者：
KAWAMURA, Y
ASAHI, H
WAKITA, K
机构：
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 11期
关键词：
D O I：
10.1049/el:19840321
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：459 / 460
页数：2
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