共 50 条
- [41] HEAVILY CARBON-DOPED P-TYPE INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04): : L537 - L539
- [43] ANTIMONY-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2851 - 2853
- [47] INGAAS EPILAYERS OF HIGH IN COMPOSITION GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 28 - 32