GE INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY - A THERMODYNAMIC STUDY

被引：4
|
作者：
MUNOZYAGUE, A
BACEIREDO, S
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 09期
关键词：
D O I：
10.1149/1.2124389
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2108 / 2113
页数：6
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