A BURIED CONTACT PROCESS FOR VLSI

被引：0
|
作者：
SZETO, R
FU, HS
CHIU, K
MANOLIU, J
机构：
[1] FAIRCHILD CAMERA & INSTRUMENT CORP,PALO ALTO,CA 94304
[2] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C327 / C327
页数：1
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