A BURIED CONTACT PROCESS FOR VLSI

被引：0

作者：

SZETO, R

FU, HS

CHIU, K

MANOLIU, J

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT CORP,PALO ALTO,CA 94304

[2] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C327 / C327

页数：1

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