GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS USING AN INAS/GAAS SUPERLATTICE

被引：10
|
作者：
KUMAR, NS
CHYI, JI
PENG, CK
MORKOC, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期
关键词：
D O I：
10.1063/1.101803
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：775 / 776
页数：2
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