GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS USING AN INAS/GAAS SUPERLATTICE

被引：10

|

作者：

KUMAR, NS

CHYI, JI

PENG, CK

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.101803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：775 / 776

页数：2

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