QUANTUM LIMIT OF A NARROW-CHANNEL GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：1
|
作者：
ROOS, G
BERGGREN, KF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 11期
关键词：
D O I：
10.1063/1.339833
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4625 / 4628
页数：4
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