SCALING AND TRANSIENT PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS

被引：0

作者：

KIZILYALLI, IC

HESS, K

LARSON, JL

WIDIGER, DJ

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

[3] CRAY RES INC,CHIPPEWA FALLS,WI

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1838 / 1838

页数：1

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