ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS

被引：59
|
作者：
MIMURA, T
HIYAMIZU, S
JOSHIN, K
HIKOSAKA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期
关键词：
D O I：
10.1143/JJAP.20.L317
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L317 / L319
页数：3
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