MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS

被引：52
|
作者：
SHENG, NH
LEE, CP
CHEN, RT
MILLER, DL
LEE, SJ
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期
关键词：
D O I：
10.1109/EDL.1985.26134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：307 / 310
页数：4
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