STATISTICAL MODELING FOR EFFICIENT PARAMETRIC YIELD ESTIMATION OF MOS VLSI CIRCUITS

被引：36

|

作者：

COX, P

YANG, P

MAHANTSHETTI, SS

CHATTERJEE, P

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：471 / 478

页数：8

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