MODELING MOS VLSI CIRCUITS FOR TRANSIENT ANALYSIS

被引：17

作者：

SUBRAMANIAM, P ^{[1
]}

机构：

[1] STEVENS INST TECHNOL,HOBOKEN,NJ 07030

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1986年 / 21卷 / 02期

关键词：

D O I：

10.1109/JSSC.1986.1052515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / 285

页数：10

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