EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

被引:0
|
作者
LEDENTSOV, NN
BER, BY
KOPEV, PS
IVANOV, SV
MELTSER, BY
MINCHEV, GM
USTINOV, VM
机构
来源
ZHURNAL TEKHNICHESKOI FIZIKI | 1985年 / 55卷 / 01期
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:142 / 147
页数:6
相关论文
共 50 条
  • [21] GaAs Layers Grown on Silicon Substrates by MBE for Photovoltaic Application
    Petrushkov, Mikhail O.
    Emelyanov, Eugene A.
    Pakhanov, Nikolai A.
    Preobrazhenskii, Valerii V.
    Putyato, Mikhail A.
    Pchelyakov, Oleg P.
    [J]. 2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM), 2014, : 45 - 50
  • [22] Structural investigations of MBE-grown InAs layers on GaAs
    Kim, SM
    Lee, SH
    Kim, H
    Shin, JK
    Leem, JY
    Kim, JS
    Kim, JS
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (01) : 119 - 122
  • [23] ULTRAHIGH THROUGHPUT OF GAAS AND (ALGA)AS LAYERS GROWN BY MBE WITH A SPECIALLY DESIGNED MBE SYSTEM
    SONODA, T
    ITO, M
    KOBIKI, M
    HAYASHI, K
    TAKAMIYA, S
    MITSUI, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 317 - 321
  • [24] Optimum growth conditions of CdS thin films grown on GaAs(111)B by MBE
    [J]. Shono, Yoshihiko, 2000, Nihon Shinku Kyokai, Tokyo, Japan (43):
  • [25] OPTIMIZED GROWTH-CONDITIONS OF GAN EPITAXIAL LAYERS
    FREMUNT, R
    CERNY, P
    KOHOUT, J
    ROSICKA, V
    BURGER, A
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (11) : 1257 - 1266
  • [26] THE EFFECT OF REDUCED GROWTH AREA ON MISFIT ACCOMMODATION IN MBE GROWN INGAAS/GAAS
    BEAM, EA
    KAO, YC
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 51 - 52
  • [27] RELATION BETWEEN GROWTH-CONDITIONS AND DEEP LEVELS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    XU, HD
    ANDERSSON, TG
    WESTIN, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 2136 - 2137
  • [28] Growth defects associated with MBE deposited GaAs layers
    Kadhim, NJ
    Mukherjee, D
    [J]. VACUUM, 1999, 55 (3-4) : 249 - 253
  • [29] ON THE CORRELATIONS BETWEEN ELECTRICAL-PROPERTIES AND GROWTH-CONDITIONS FOR VPE GAAS GROWN IN THE HYDRIDE SYSTEM
    DIEGNER, B
    KUGLER, J
    WEINERT, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (01): : 345 - 351
  • [30] INFLUENCE OF GROWTH-CONDITIONS ON THE PHOTOLUMINESCENCE OF PSEUDOMORPHIC MBE GROWN SI1-XGEX QUANTUM-WELLS
    BRUNNER, J
    MENCZIGAR, U
    GAIL, M
    FRIESS, E
    ABSTREITER, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 443 - 446