THE EFFECT OF REDUCED GROWTH AREA ON MISFIT ACCOMMODATION IN MBE GROWN INGAAS/GAAS

被引：0
|
作者：
BEAM, EA [1 ]
KAO, YC [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：51 / 52
页数：2
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