DISTRIBUTION OF RADIATION-DAMAGE RATE WITH DEPTH IN SILICON BOMBARDED WITH HIGH-ENERGY ELECTRONS

被引：8
|
作者：
YASUDA, K
MASUDA, H
TAKEDA, M
WADA, T
机构：
[1] GOVT IND RES INST,KITA KU,NAGOYA 462,JAPAN
[2] MIE UNIV,FAC ENGN,DEPT ELECT ENGN,TSU 514,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 02期
关键词：
D O I：
10.1143/JJAP.16.387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：387 / 388
页数：2
相关论文
共 50 条
  • [41] SYNCHROTRON RADIATION FROM HIGH-ENERGY ELECTRONS
    PETERSON, AM
    HOWER, GL
    JOURNAL OF GEOPHYSICAL RESEARCH, 1963, 68 (03): : 723 - +
  • [42] HIGH-ENERGY ELECTRONS IN THE RADIATION BELT OF EARTH
    VORONOV, SA
    GALPER, AM
    DMITRENKO, VV
    KIRILLOVUGRYUMOV, VG
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (09): : 38 - 43
  • [43] APPLICATION OF A HIGH-ENERGY TANDEM ACCELERATOR TO THE STUDY OF RADIATION-DAMAGE EFFECTS ON STAINLESS-STEELS
    TSUKUDA, N
    KURAMOTO, E
    AONO, Y
    KITAJIMA, K
    ABE, H
    YOSHIDA, N
    AKASHI, Y
    TAKENAKA, M
    MITARAI, S
    ISOYA, A
    JOURNAL OF NUCLEAR MATERIALS, 1985, 133 (AUG) : 873 - 877
  • [44] A COMPARATIVE-STUDY OF SWELLING, STRAIN AND RADIATION-DAMAGE OF HIGH-ENERGY PROTON-BOMBARDED GAAS, GAP, INP, SI AND GE SINGLE-CRYSTALS
    ASCHERON, C
    SCHINDLER, A
    FLAGMEYER, R
    OTTO, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 36 (02): : 163 - 172
  • [45] TIME-ENERGY DISTRIBUTION OF ATOMS IN A RADIATION-DAMAGE CASCADE
    WILLIAMS, MMR
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (17) : 2463 - 2470
  • [46] RADIATION-DAMAGE IN SILICON STRIP DETECTORS
    DIETL, H
    GOOCH, T
    KELSEY, D
    KLANNER, R
    LOFFLER, A
    PEPE, M
    WICKENS, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03): : 460 - 466
  • [47] RADIATION-DAMAGE IN SILICON MICROSTRIP DETECTORS
    OHSUGI, T
    TAKETANI, A
    NODA, M
    CHIBA, Y
    ASAI, M
    KONDO, T
    SATO, T
    TAKASAKI, M
    TANAKA, KH
    KONDO, K
    HIRAYAMA, H
    YAMAMOTO, K
    TANAKA, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 265 (1-2): : 105 - 111
  • [48] INFLUENCE OF THE FLUX-DENSITY ON THE RADIATION-DAMAGE OF BIPOLAR SILICON TRANSISTORS BY PROTONS AND ELECTRONS
    BANNIKOV, YA
    GORIN, BM
    KOZHEVNIKOV, VP
    MIKHNOVICH, VV
    GUSEV, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1289 - 1292
  • [49] Virtual scattering of high-energy electrons by plasmons and valence electrons in silicon
    Forsyth, AJ
    Smith, AE
    Josefsson, TW
    ACTA CRYSTALLOGRAPHICA SECTION A, 1997, 53 : 523 - 525
  • [50] Enhanced damage induced by secondary high-energy electrons
    Yan, S.
    Zhu, X. L.
    Zhang, S. F.
    Zhao, D. M.
    Zhang, P.
    Wei, B.
    Ma, X.
    PHYSICAL REVIEW A, 2020, 102 (03)
12345