DISTRIBUTION OF RADIATION-DAMAGE RATE WITH DEPTH IN SILICON BOMBARDED WITH HIGH-ENERGY ELECTRONS

被引：8
|
作者：
YASUDA, K
MASUDA, H
TAKEDA, M
WADA, T
机构：
[1] GOVT IND RES INST,KITA KU,NAGOYA 462,JAPAN
[2] MIE UNIV,FAC ENGN,DEPT ELECT ENGN,TSU 514,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 02期
关键词：
D O I：
10.1143/JJAP.16.387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：387 / 388
页数：2
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