RADIATION-DAMAGE IN SILICON STRIP DETECTORS

被引：24
|
作者：
DIETL, H
GOOCH, T
KELSEY, D
KLANNER, R
LOFFLER, A
PEPE, M
WICKENS, F
机构：
[1] CERN,CH-1211 GENEVA 23,SWITZERLAND
[2] RUTHERFORD APPLETON LAB,DIDCOT OX11 0QX,OXON,ENGLAND
[3] UNIV BRISTOL,BRISTOL BS8 1TH,AVON,ENGLAND
[4] UNIV HAMBURG,D-2000 HAMBURG 13,FED REP GER
[5] DESY,D-2000 HAMBURG 52,FED REP GER
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1987年 / 253卷 / 03期
关键词：
D O I：
10.1016/0168-9002(87)90533-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：460 / 466
页数：7
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