Effect of Cl incorporation on the stability of hydrogenated amorphous silicon

被引：9
|
作者：
Byun, JS
Jeon, HB
Lee, KH
Jang, J
机构：
[1] Department of Physics, Kyung Hee University, Dongdaemoon-ku
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期
关键词：
D O I：
10.1063/1.115383
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogenated amorphous silicon (alpha-Si:H) films were prepared by remote plasma chemical vapor deposition (RPCVD) using SiH4/SiH2Cl2/He/H-2 mixtures. With increasing Cl content in alpha-Si:H up to about 10(19) cm(-3), the stablity of photoconductivity under light illumination was improved with keeping the defect density and Urbach energy constant. We deposited hydrogenated amorphous silicon films with hydrogen content of 6 at. %, Cl content of similar to 10(19) cm(-3), and defect density of 3x10(15) cm(-3), which exhibited very small photoconductivity degradation under light illumination. The optimum Cl concentration in alpha-Si:H for stable alpha-Si:H appears to be similar to 10(19) cm(-3). (C) 1995 American Institute of Physics.
引用
收藏
页码：3786 / 3788
页数：3
相关论文
共 50 条
  • [1] Incorporation of Cl into hydrogenated amorphous silicon without optical band gap widening
    Takano, A
    Aydil, ES
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (12A): : L1357 - L1359
  • [2] INCORPORATION OF NITROGEN IN THE NETWORK OF AMORPHOUS HYDROGENATED SILICON
    ZHDANOVICH, NS
    SEMICONDUCTORS, 1995, 29 (08) : 783 - 784
  • [3] INFLUENCE OF CARBON INCORPORATION IN AMORPHOUS HYDROGENATED SILICON
    SCHMIDT, MP
    BULLOT, J
    GAUTHIER, M
    CORDIER, P
    SOLOMON, I
    TRANQUOC, H
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (06): : 581 - 589
  • [4] INFLUENCE OF CARBON INCORPORATION IN AMORPHOUS HYDROGENATED SILICON.
    Schmidt, M.P.
    Bullot, J.
    Gauthier, M.
    Cordier, P.
    Solomon, I.
    Tran-Quoc, H.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 51 (06): : 581 - 589
  • [5] Effect of Cl incorporation on the performance of amorphous silicon thin film transistors
    Choi, JH
    Kim, CS
    Kim, SK
    Jang, J
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 4081 - 4085
  • [6] Effect of Cl incorporation on the performance of amorphous silicon thin film transistor
    Choi, JH
    Kim, CS
    Kim, SK
    Jang, J
    PROCEEDINGS OF THE FOURTH ASIAN SYMPOSIUM ON INFORMATION DISPLAY, 1997, : 237 - 240
  • [7] Effect of Cl incorporation on the performance of amorphous silicon thin film transistors
    J Appl Phys, 8 (4081):
  • [8] Electrical properties of Cl incorporated hydrogenated amorphous silicon
    Kyung Hee Univ, Seoul, Korea, Republic of
    Sol Energ Mater Sol Cells, 1-4 (61-67):
  • [9] Electrical properties of Cl incorporated hydrogenated amorphous silicon
    Lee, KH
    Kim, SK
    Lee, KS
    Choi, JH
    Kim, CS
    Jang, J
    Pietruszko, SM
    Kostana, M
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 61 - 67
  • [10] Study on stability of hydrogenated amorphous silicon films
    Zhu, XH
    Chen, GH
    Zhang, WL
    Ding, Y
    Ma, ZJ
    Hu, YH
    He, B
    Rong, YD
    CHINESE PHYSICS, 2005, 14 (11): : 2348 - 2351
12345