Effect of Cl incorporation on the stability of hydrogenated amorphous silicon

被引：9
|
作者：
Byun, JS
Jeon, HB
Lee, KH
Jang, J
机构：
[1] Department of Physics, Kyung Hee University, Dongdaemoon-ku
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期
关键词：
D O I：
10.1063/1.115383
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogenated amorphous silicon (alpha-Si:H) films were prepared by remote plasma chemical vapor deposition (RPCVD) using SiH4/SiH2Cl2/He/H-2 mixtures. With increasing Cl content in alpha-Si:H up to about 10(19) cm(-3), the stablity of photoconductivity under light illumination was improved with keeping the defect density and Urbach energy constant. We deposited hydrogenated amorphous silicon films with hydrogen content of 6 at. %, Cl content of similar to 10(19) cm(-3), and defect density of 3x10(15) cm(-3), which exhibited very small photoconductivity degradation under light illumination. The optimum Cl concentration in alpha-Si:H for stable alpha-Si:H appears to be similar to 10(19) cm(-3). (C) 1995 American Institute of Physics.
引用
收藏
页码：3786 / 3788
页数：3
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