Effect of Cl incorporation on the stability of hydrogenated amorphous silicon

被引：9
|
作者：
Byun, JS
Jeon, HB
Lee, KH
Jang, J
机构：
[1] Department of Physics, Kyung Hee University, Dongdaemoon-ku
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期
关键词：
D O I：
10.1063/1.115383
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogenated amorphous silicon (alpha-Si:H) films were prepared by remote plasma chemical vapor deposition (RPCVD) using SiH4/SiH2Cl2/He/H-2 mixtures. With increasing Cl content in alpha-Si:H up to about 10(19) cm(-3), the stablity of photoconductivity under light illumination was improved with keeping the defect density and Urbach energy constant. We deposited hydrogenated amorphous silicon films with hydrogen content of 6 at. %, Cl content of similar to 10(19) cm(-3), and defect density of 3x10(15) cm(-3), which exhibited very small photoconductivity degradation under light illumination. The optimum Cl concentration in alpha-Si:H for stable alpha-Si:H appears to be similar to 10(19) cm(-3). (C) 1995 American Institute of Physics.
引用
收藏
页码：3786 / 3788
页数：3
相关论文
共 50 条
  • [31] The effect of hydrogen on the network disorder in hydrogenated amorphous silicon
    Department of Physics, University of Puerto Rico, San Juan 00931, Puerto Rico
    不详
    Appl Phys Lett, 18 (2803-2805):
  • [32] THE STAEBLER-WRONSKI EFFECT IN AMORPHOUS HYDROGENATED SILICON
    WAGNER, D
    ACTA PHYSICA AUSTRIACA, 1985, 57 (3-4): : 251 - 275
  • [33] EFFECT OF OXYGEN ON THE OPTOELECTRONIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON
    YACOBI, BG
    COLLINS, RW
    MODDEL, G
    VIKTOROVITCH, P
    PAUL, W
    PHYSICAL REVIEW B, 1981, 24 (10): : 5907 - 5912
  • [34] The effect of chlorine on dopant activation in hydrogenated amorphous silicon
    Payne, AM
    Wagner, S
    APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2949 - 2951
  • [35] ON LIGHT-INDUCED EFFECT IN AMORPHOUS HYDROGENATED SILICON
    GUHA, S
    NARASIMHAN, KL
    PIETRUSZKO, SM
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 859 - 860
  • [36] The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET
    Chou, JC
    Hsiao, CN
    SENSORS AND ACTUATORS B-CHEMICAL, 2000, 66 (1-3) : 181 - 183
  • [37] PHOTOCORROSION OF HYDROGENATED AMORPHOUS-SILICON - EFFECT OF THE SOLVENT
    SAVADOGO, O
    YELON, A
    CANADIAN JOURNAL OF PHYSICS, 1989, 67 (10) : 980 - 983
  • [38] Staebler-Wronski effect in hydrogenated amorphous silicon
    Prasad, R
    Shenoy, SR
    PHYSICS LETTERS A, 1996, 218 (1-2) : 85 - 90
  • [39] The effect of hydrogen on the network disorder in hydrogenated amorphous silicon
    Gupta, S
    Katiyar, RS
    Morell, G
    Weisz, SZ
    Balberg, I
    APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2803 - 2805
  • [40] Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions
    Mangolini, Filippo
    Krick, Brandon A.
    Jacobs, Tevis D. B.
    Khanal, Subarna R.
    Streller, Frank
    McClimon, J. Brandon
    Hilbert, James
    Prasad, Somuri V.
    Scharf, Thomas W.
    Ohlhausen, James A.
    Lukes, Jennifer R.
    Sawyer, W. Gregory
    Carpick, Robert W.
    CARBON, 2018, 130 : 127 - 136
12345