Electrical properties of Cl incorporated hydrogenated amorphous silicon

被引：1

作者：

Lee, KH ^{[1
]}

Kim, SK ^{[1
]}

Lee, KS ^{[1
]}

Choi, JH ^{[1
]}

Kim, CS ^{[1
]}

Jang, J ^{[1
]}

Pietruszko, SM ^{[1
]}

Kostana, M ^{[1
]}

机构：

[1] WARSAW UNIV TECHNOL,INST MICRO & OPTOELECT,IMIOPW,WARSAW,POLAND

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 49卷 / 1-4期

关键词：

electrical properties; amorphous silicon;

D O I：

10.1016/S0927-0248(97)00176-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The electrical properties of chlorine incorporated hydrogenated amorphous silicon films were studied. The samples were deposited with dichlosilane/silane mixtures. The conductivity of these chlorine-incorportated hydrogenated amorphous silicon films decreases with increasing dichlosilane to silane ratio. The Fermi level shifts toward the valence band with increasing chlorine content, resulting in a corresponding conductivity activation energy and room temperature conductivity decrease. However, the defect density and Urbach energy are not significantly changed in films containing chlorine.

引用

页码：61 / 67

页数：7

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