GROWTH OF GAAS ON GAAS-COATED SI BY LIQUID-PHASE EPITAXY

被引：27
|
作者：
SAKAI, S [1 ]
MATYI, RJ [1 ]
SHICHIJO, H [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期
关键词：
D O I：
10.1063/1.340010
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1075 / 1079
页数：5
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