GROWTH OF GAAS ON GAAS-COATED SI BY LIQUID-PHASE EPITAXY

被引：27

作者：

SAKAI, S ^{[1
]}

MATYI, RJ ^{[1
]}

SHICHIJO, H ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1075 / 1079

页数：5

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