HIGH-DOSE ARSENIC IMPLANTATION OF SILICON

This work is part of a series of investigations started a few years ago to study high fluence ion beam effects. Experimental and computer techniques are applied here to the implantation of 40 keV As+ in (111) Si samples at doses ranging from 1 X 10(16) to 2 X 10(17) cm-2. The experimental evolution of the profile was analyzed by 2 MeV RBS spectroscopy. A special procedure was used to deconvolute the RBS data for highly nonhomogeneous layers. The atomic collision cascades were also simulated by a dynamic computer code, based on sputtering yield values and impurity depth distributions resulting from the well-known static code TRIM.SP. The distributions were used as input data to a procedure which takes into account the modification of the stopping power, the surface erosion by sputtering and the lattice relaxation.