FORMATION OF SILICON-NITRIDE COMPOUND LAYERS BY HIGH-DOSE NITROGEN IMPLANTATION

被引：0
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作者：
TSUJIDE, T [1 ]
NOJIRI, M [1 ]
KITAGAWA, H [1 ]
机构：
[1] NIPPON ELECT CO LTD,DIV IC,KAWASAKI 211,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 06期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C227 / C227
页数：1
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