REGROWTH OF AMORPHOUS LAYERS CREATED BY HIGH-DOSE ANTIMONY IMPLANTATION IN 100 SILICON

被引：15
|
作者：
TAMMINGA, Y [1 ]
JOSQUIN, WJM [1 ]
机构：
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 01期
关键词：
D O I：
10.1063/1.89828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：13 / 15
页数：3
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