KINETICS AND MECHANISM OF POROUS LAYER GROWTH DURING NORMAL-TYPE SILICON ANODIZATION IN HF SOLUTION

被引：33

|

作者：

PARKHUTIK, VP

GLINENKO, LK

LABUNOV, VA

机构：

来源：

SURFACE TECHNOLOGY | 1983年 / 20卷 / 03期

关键词：

D O I：

10.1016/0376-4583(83)90009-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：265 / 277

页数：13

相关论文

共 50 条

[31] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE LAYERS ON SILICON IN HYDROFLUORIC ACID. SPECIFIC KINETIC FEATURES OF POROUS-LAYER FORMATION ON n- AND p-TYPE SILICON.
Izidinov, S.O.
Blokhina, A.P.
Martynova, T.S.
1600, (22):
[32] CHARACTERIZATION OF THE ELECTROPOLISHING LAYER DURING ANODIC ETCHING OF P-TYPE SILICON IN AQUEOUS HF SOLUTIONS
SERRE, C
BARRET, S
HERINO, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) : 2049 - 2053
[33] Kinetics and Mechanism of Growth of Polycrystalline Silicon Layers During Pyrolysis of Monosilane in Argon.
Puga, V.A.
Neorganiceskie materialy, 1986, 22 (10): : 1594 - 1598
[34] CHARGE-EXCHANGE MECHANISM RESPONSIBLE FOR P-TYPE SILICON DISSOLUTION DURING POROUS SILICON FORMATION
GASPARD, F
BSIESY, A
LIGEON, M
MULLER, F
HERINO, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) : 3043 - 3046
[35] A proposed mechanism for investigating the effect of porous silicon buffer layer on TiO2 nanorods growth
Rahmani, N.
Dariani, R. S.
Rajabi, M.
APPLIED SURFACE SCIENCE, 2016, 366 : 359 - 364
[36] Growth kinetics on silicon facets during low-temperature crystallization from indium solution
Teubner, Th.
Heimburger, R.
Boeck, T.
Fornari, R.
JOURNAL OF CRYSTAL GROWTH, 2012, 347 (01) : 31 - 36
[37] Effect of silicon and manganese on the kinetics and morphology of the intermetallic layer growth during hot-dip aluminizing
Azimaee, Hamidreza
Sarfaraz, Mahla
Mirjalili, Mostafa
Aminian, Kosar
SURFACE & COATINGS TECHNOLOGY, 2019, 357 : 483 - 496
[38] INFLUENCE OF THE CONDUCTIVITY TYPE OF A MONOCRYSTALLINE BASE ON THE KINETICS OF FORMATION AND PHYSICAL AND CHEMICAL-PROPERTIES OF THE SURFACE-LAYER OF POROUS SILICON
IZIDINOV, SO
BLOKHINA, AP
LAZARENKO, MA
ISMAILOVA, LA
ZHURNAL FIZICHESKOI KHIMII, 1987, 61 (08): : 2127 - 2133
[39] Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition
Liao, Y
Ye, F
Shao, QY
Chang, C
Wang, GZ
Fang, RC
THIN SOLID FILMS, 2000, 368 (02) : 211 - 215
[40] Effect of hydrofluoric acid concentration on the structure and kinetics of electrochemical formation of the porous layer on n-type silicon under steady illumination
Izidinov, S.O.
Blokhina, A.P.
Ismailova, L.A.
Soviet electrochemistry, 1988, 23 (11): : 1445 - 1452

← 1 2 3 4 5 →