CHARACTERIZATION OF DEFECTS IN AS-IMPLANTED AND LASER-ANNEALED SI LAYER TOGETHER WITH ELECTRICAL-PROPERTIES OF AS ATOMS

被引：1
|
作者：
SHIBATA, K
INOUE, T
KASHIWAGI, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 08期
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D O I：
10.1143/JJAP.21.1111
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1111 / 1116
页数：6
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