CHARACTERIZATION OF DEFECTS IN AS-IMPLANTED AND LASER-ANNEALED SI LAYER TOGETHER WITH ELECTRICAL-PROPERTIES OF AS ATOMS

被引：1
|
作者：
SHIBATA, K
INOUE, T
KASHIWAGI, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 08期
关键词：
D O I：
10.1143/JJAP.21.1111
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1111 / 1116
页数：6
相关论文
共 50 条
  • [31] INVESTIGATION OF LASER-ANNEALED ANTIMONY IMPLANTED Si BY ION BACKSCATTERING AND CHANNELING AND STRUCTURE ANALYSIS.
    Bhattacharya, P.K.
    Kansara, M.J.
    Nathan, T.P.S.
    Singh, P.
    Wagh, A.G.
    [J]. Applied Physics A: Solids and Surfaces, 1986, A39 (02): : 147 - 153
  • [32] ELECTRICAL-PROPERTIES OF B-ION-IMPLANTED SI LAYER PREAMORPHIZED BY GE IONS
    KURIYAMA, K
    AOKI, S
    SATOH, M
    KUREBAYASHI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) : 1876 - 1878
  • [33] PARAMETERS EFFECTING THE ELECTRICAL-PROPERTIES OF BE AND SI IMPLANTED GAAS
    MOLNAR, B
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C119 - C119
  • [34] ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES
    KIM, J
    JOSHI, AB
    LO, GQ
    KWONG, DL
    LEE, S
    [J]. ELECTRONICS LETTERS, 1993, 29 (01) : 34 - 35
  • [35] ELECTRICAL-PROPERTIES OF GE-IMPLANTED AND OXIDIZED SI
    TURAN, R
    FINSTAD, TG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 75 - 81
  • [36] CHARACTERIZATION OF ION-IMPLANTED, LASER-ANNEALED SILICON FOR SOLAR-CELL APPLICATIONS
    WHITE, CW
    [J]. TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1979, 33 (NOV): : 246 - 248
  • [37] INVESTIGATION OF LASER-ANNEALED ANTIMONY IMPLANTED SI BY ION BACKSCATTERING AND CHANNELING AND STRUCTURE-ANALYSIS
    BHATTACHARYA, PK
    KANSARA, MJ
    NATHAN, TPS
    SINGH, P
    WAGH, AG
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02): : 147 - 153
  • [38] RADIATION DEFECTS AND ELECTRICAL-PROPERTIES OF SILICON LAYERS CONTAINING SB AND AS IMPLANTED WITH SI+ IONS
    ARAIKA, OJ
    CHELYADINSKII, AR
    DRAVIN, VA
    SUPRUNBELEVICH, YR
    TOLSTIKH, VP
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 73 (04): : 503 - 506
  • [39] CHARACTERIZATION OF LASER-ANNEALED SI BY SPECTROSCOPIC ELLIPSOMETRY AND BY TRANSMISSION ELECTRON AND OPTICAL MICROSCOPY
    ASPNES, DE
    ROZGONYI, GA
    SHENG, TT
    CELLER, GK
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C363 - C363
  • [40] Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium
    Kalliovaara, T.
    Slotte, J.
    Makkonen, I.
    Kujala, J.
    Tuomisto, F.
    Milazzo, R.
    Impellizzeri, G.
    Fortunato, G.
    Napolitani, E.
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (18)
12345