ELECTRICAL-PROPERTIES OF B-ION-IMPLANTED SI LAYER PREAMORPHIZED BY GE IONS

被引：1
|
作者：
KURIYAMA, K [1 ]
AOKI, S [1 ]
SATOH, M [1 ]
KUREBAYASHI, M [1 ]
机构：
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 04期
关键词：
D O I：
10.1063/1.344366
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1876 / 1878
页数：3
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