ELECTRICAL-PROPERTIES OF P-TYPE LAYER IN SI-IMPLANTED GAAS

被引：0
|
作者：
SHIGETOMI, S [1 ]
MATSUMORI, T [1 ]
机构：
[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,SHIBUYA KU,TOKYO 151,JAPAN
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 97卷 / 01期
关键词：
D O I：
10.1002/pssa.2210970151
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Since Si is an amphoteric impurity in GaAs, it can act either as a donor or an acceptor. This note reports the electrical properties of Si-implanted GaAs annealed with SiO//2 encapsulant and discusses the carrier transport and scattering mechanisms in p-type layers produced by ion implantation of Si.
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页码：K83 / K86
页数：4
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