DEFECT STRUCTURE AND ELECTRICAL PROPERTY MODIFICATIONS CAUSED BY REACTIVE ION ETCHING AND ION-BEAM ETCHING

被引：0
|
作者：
FONASH, SJ
SINGH, R
CLIMENT, A
ROHATGI, A
CHOUDHURY, PR
CAPLAN, P
POINDEXTER, E
机构：
[1] PENN STATE UNIV,UNIVERSITY PK,PA 16802
[2] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235
[3] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21413
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1613 / 1613
页数：1
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