TOTAL DOSE RADIATION-HARDENED LATCH-UP FREE CMOS STRUCTURES FOR RADIATION-TOLERANT VLSI DESIGNS

被引：14
|
作者：
HATANO, H [1 ]
TAKATSUKA, S [1 ]
机构：
[1] TOSHIBA MICROCOMP ENGN CORP,KAWASAKI 210,JAPAN
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1109/TNS.1986.4334631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1505 / 1509
页数：5
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