Design of a total-dose radiation hardened monolithic CMOS DC-DC boost converter

This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation.In order to improve its radiation tolerant abilities,circuit-level and device-level RHBD(radiation-hardening by design) techniques were employed.Adaptive slope compensation was used to improve the inherent instability.The H-gate MOS transistors,annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose.A boost converter was fabricated by a standard commercial 0.35μm CMOS process.The hardened design converter can work properly in a wide range of total dose radiation environments,with increasing total dose radiation.The efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.