DOSE-RATE AND EXTENDED TOTAL DOSE CHARACTERIZATION OF RADIATION HARDENED METAL GATE CMOS INTEGRATED-CIRCUITS

被引：4

|

作者：

LONDON, A

WANG, RC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1172 / 1175

页数：4

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