METHOD FOR MEASUREMENTS OF SENSITIVE LAYER THICKNESS OF SEMICONDUCTOR-DETECTORS

被引：0

作者：

ILYASOV, AZ ^{[1
]}

MAZITOV, BS ^{[1
]}

机构：

[1] ACAD SCI UZSSR,NUCL PHYS INST,ULUGBEK,UZSSR

来源：

PRIBORY I TEKHNIKA EKSPERIMENTA | 1974年 / 02期

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：60 / 62

页数：3

共 50 条

[1] DETERMINATION OF THE THICKNESS OF THE SENSITIVE LAYER OF SEMICONDUCTOR-DETECTORS WITH THE AID OF BETA-SOURCES AND GAMMA-SOURCES
ALEKSANDROV, AA
KIRSANOVA, IV
LYAPIDEVSKII, VK
FEDOSEEVA, OP
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1978, 21 (05) : 1201 - 1203
[2] POSITION-SENSITIVE SEMICONDUCTOR-DETECTORS
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[3] DELAYED COINCIDENCE MEASUREMENTS USING SEMICONDUCTOR-DETECTORS
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[4] SEMICONDUCTOR-DETECTORS
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[5] NEW STRUCTURES FOR POSITION-SENSITIVE SEMICONDUCTOR-DETECTORS
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[6] SEMICONDUCTOR-DETECTORS FOR LIFETIME MEASUREMENTS AND HIGH SPACE RESOLUTION
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[7] SEMICONDUCTOR-DETECTORS FOR LIFETIME MEASUREMENTS AND HIGH SPACE RESOLUTION
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[8] SEMICONDUCTOR-DETECTORS - INTRODUCTION
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[9] STATUS AND PROBLEMS OF SEMICONDUCTOR-DETECTORS
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[10] RECENT ADVANCES IN SEMICONDUCTOR-DETECTORS
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