CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP

被引：40
|
作者：
TSANG, WT
DAYEM, AH
CHIU, TH
CUNNINGHAM, JE
SCHUBERT, EF
DITZENBERGER, JA
SHAH, J
ZYSKIND, JL
TABATABAIE, N
机构：
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
[2] BELL COMMUN RES,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：170 / 172
页数：3
相关论文
共 50 条
  • [41] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB INAS FOR PHOTODIODES
    GONG, XY
    KAN, H
    YAMAGUCHI, T
    SUZUKI, I
    AOYAMA, M
    KUMAGAWA, M
    ROWELL, NL
    AIGUO, W
    RINFRET, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 125 - 127
  • [42] A SIMPLE PROCESS TO PRODUCE A HIGH-QUALITY SILICON SURFACE PRIOR TO SELECTIVE EPITAXIAL-GROWTH
    BASHIR, R
    MCKEOWN, W
    KABIR, AE
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) : 306 - 308
  • [43] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE AND ZNSE/ZNS SUPERLATTICES FOR OPTICAL-PROCESSING
    PONG, CD
    FEIGELSON, RS
    DEMATTEI, RC
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 650 - 654
  • [44] HIGH-QUALITY SINGLE-CRYSTAL NB FILMS AND INFLUENCES OF SUBSTRATES ON THE EPITAXIAL-GROWTH
    OYA, G
    KOISHI, M
    SAWADA, Y
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1440 - 1446
  • [45] EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD
    SHIOMI, H
    TANABE, K
    NISHIBAYASHI, Y
    FUJIMORI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01): : 34 - 40
  • [46] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE
    CHIU, TH
    TSANG, WT
    SCHUBERT, EF
    AGYEKUM, E
    APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1109 - 1111
  • [47] CHEMICAL BEAM EPITAXIAL-GROWTH OF INAS USING TRIMETHYLINDIUM AND ARSINE
    CHIU, TH
    DITZENBERGER, JA
    APPLIED PHYSICS LETTERS, 1990, 56 (22) : 2219 - 2221
  • [48] IMPROVED MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP USING SOLID SOURCES
    ROBERTS, JS
    CLAXTON, PA
    DAVID, JPR
    MARSH, JH
    ELECTRONICS LETTERS, 1986, 22 (10) : 506 - 507
  • [49] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
    FAURIE, JP
    SIVANANTHAN, S
    BOUKERCHE, M
    RENO, J
    APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1307 - 1309
  • [50] GROWTH OF HIGH-QUALITY INP WITH METAL ORGANIC MOLECULAR-BEAM EPITAXY
    HEINECKE, H
    HOGER, R
    BAUR, B
    MIKLIS, A
    ELECTRONICS LETTERS, 1990, 26 (03) : 213 - 214
12345